2SB1367 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). Collector Power Dissipation- : PC= 30W@ TC= 25℃. Low Collector Saturation Vo.

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Datasheet Specifications

Part number: 2SB1367
Manufacturer: INCHANGE
File Size: 209.54 KB
Datasheet: 2SB1367-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A IB Base Current-Continuous

2SB1367 Distributors

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2SB1367 PNP Transistor INCHANGE

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