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2SB1367 PNP Transistor

2SB1367 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). Collector Power Dissipation- : PC= 30W@ TC= 25℃. Low Collector Saturation Vo.

2SB1367 Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A IB Base Current-Continuous

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Datasheet Details

Part number
2SB1367
Manufacturer
INCHANGE
File Size
209.54 KB
Datasheet
2SB1367-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1367-like datasheet