2SB1551 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). High DC Current Gain. Built-in resistor between base and emitter. Built-in.

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Datasheet Specifications

Part number: 2SB1551
Manufacturer: INCHANGE
File Size: 230.75 KB
Datasheet: 2SB1551-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse

2SB1551 Distributors

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2SB1551 PNP Transistor INCHANGE

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