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2SB1551 PNP Transistor

2SB1551 Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). High DC Current Gain. Built-in resistor between base and emitter. Built-in.

2SB1551 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse

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Datasheet Details

Part number
2SB1551
Manufacturer
INCHANGE
File Size
230.75 KB
Datasheet
2SB1551-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1551-like datasheet