Part number:
2SB1553
Manufacturer:
Panasonic Semiconductor
File Size:
52.74 KB
Description:
Silicon pnp epitaxial planar type transistor.
* 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing automatic insertion with radial taping (TC=25˚C) Ratings
* 60
* 60
* 6
* 6
* 3
* 1 15 2 150
2SB1553
Panasonic Semiconductor
52.74 KB
Silicon pnp epitaxial planar type transistor.
📁 Related Datasheet
2SB1550 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1550
DESCRIPTION ·With TO-220C package ·High DC .
2SB1550 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High DC Current Gain-
: hFE= 100.
2SB1551 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1551
DESCRIPTION ·With TO-220Fa package ·High DC.
2SB1551 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High DC Current Gain·Built-in res.
2SB1554 - Silicon PNP epitaxial planar type Transistor
(Panasonic Semiconductor)
Power Transistors
2SB1554
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
s Features
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0
q q
.
2SB1555 - TRANSISTOR
(Toshiba Semiconductor)
.
2SB1555 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·High DC Current Gain-
: hFE= 50.
2SB1556 - TRANSISTOR
(Toshiba Semiconductor)
.