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2SB1553 - Silicon PNP epitaxial planar type Transistor

Datasheet Summary

Features

  • 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing automatic insertion with radial taping (TC=25˚C) Ratings.
  • 60.
  • 60.
  • 6.
  • 6.
  • 3.
  • 1 15 2 150.
  • 55 to +150 Unit V V V A A A W ˚C ˚C 90° 1.2±0.1 18.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak.

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Datasheet Details

Part number 2SB1553
Manufacturer Panasonic Semiconductor
File Size 52.74 KB
Description Silicon PNP epitaxial planar type Transistor
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Power Transistors 2SB1553 Silicon PNP epitaxial planar type For power amplification Unit: mm s Features 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing automatic insertion with radial taping (TC=25˚C) Ratings –60 –60 –6 –6 –3 –1 15 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 90° 1.2±0.1 18.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg C1.0 2.25±0.2 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 C1.
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