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2SB1504 - Silicon PNP epitaxial planar type darlington

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Part number 2SB1504
Manufacturer Panasonic
File Size 101.97 KB
Description Silicon PNP epitaxial planar type darlington
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Power Transistors 2SB1504 Silicon PNP epitaxial planar type darlington Unit: mm For power switching • High forward current transfer ratio hFE • High-speed switching • Allowing automatic insertion with radial taping 3.8±0.2 10.8±0.2 7.5±0.2 4.5±0.2 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ 0.8 C 16.0±1.0 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −50 −7 −8 −12 1.5 150 −55 to +150 Unit V V V A A W °C °C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 2.5±0.2 2.5±0.
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