* q q q Optimum for 110W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <
* 2.5V 1.5 2.0 4.0 1.5 Solder Dip s 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEB
2SB1503
Panasonic Semiconductor
70.97 KB
Silicon pnp transistor.
Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 6.0 20.0±0.5 φ 3.3±0.2 5.0±0..
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