Part number:
2SB1527
Manufacturer:
Sanyo Semicon Device
File Size:
71.23 KB
Description:
Pnp epitaxial planar silicon transistors.
* Low saturation voltage.
* Contains a diode between collector and emitter.
* Contains a bias resistor between base and emitter.
* Large current capacity.
* Compact package making it easy to realize high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2018B [2SB1527
2SB1527
Sanyo Semicon Device
71.23 KB
Pnp epitaxial planar silicon transistors.
📁 Related Datasheet
2SB1527 - PNP Epitaxial Planar Silicon Transistors
(Kexin)
SMD Type
Transistors IC
PNP Epitaxial Planar Silicon Transistors 2SB1527
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
Features
+0.1 2.4-0.1
Low satur.
2SB1502 - Silicon PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB1502
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2275
6.0
20.0±0.5 φ 3.3±0.2 5.0±0..
2SB1502 - Silicon PNP Darlington Power Transistor
(New Jersey Semi-Conductor)
C/
J.
TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A.
Silicon PNP Darlington Power T.
2SB1502 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 5000(Min)@IC= -4A ·Low-Collector Saturation Voltage-
: VCE(sat).
2SB1503 - Silicon PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB1503
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2276
6.0
20.0±0.5 φ 3.3±0.2 5.0±0..
2SB1503 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1503
DESCRIPTION ·With TO-3PL package ·Complemen.
2SB1503 - Silicon PNP Darlington Power Transistor
(New Jersey Semi-Conductor)
, One.
20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922
(212)227-6005 FAX: (973) 376-8960
Silicon PNP Darlington Power T.
2SB1503 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 5000(Min)@IC= -7A ·Low-Collector Saturation Voltage-
: VCE(sat).
