* Low collector-to-emitter saturation voltage : VCE(sat)=
* 0.5V (PNP), 0.4V (NPN) max.
* Large current capacity.
* Micaless package facilitating easy mounting. Package Dimensions unit:mm 2039A [2SB1511/2SD2285] ( ) : 2SB1511 Specifications E : Emitter C : Collector B : Base SAN
2SB1511
Sanyo Semicon Device
126.39 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:EN3716
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1511/2SD2285
30V/20A High-Current Switching Applications
Applications
* R.
📁 Related Datasheet
2SB1510 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:EN3881
Applications
· Motor drivers, hammer drivers, relay drivers.
Features
· High DC current gain. · Good dependence of DC current g.
2SB1502 - Silicon PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB1502
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2275
6.0
20.0±0.5 φ 3.3±0.2 5.0±0..
2SB1502 - Silicon PNP Darlington Power Transistor
(New Jersey Semi-Conductor)
C/
J.
TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A.
Silicon PNP Darlington Power T.
2SB1502 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 5000(Min)@IC= -4A ·Low-Collector Saturation Voltage-
: VCE(sat).
2SB1503 - Silicon PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB1503
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2276
6.0
20.0±0.5 φ 3.3±0.2 5.0±0..
2SB1503 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1503
DESCRIPTION ·With TO-3PL package ·Complemen.
2SB1503 - Silicon PNP Darlington Power Transistor
(New Jersey Semi-Conductor)
, One.
20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922
(212)227-6005 FAX: (973) 376-8960
Silicon PNP Darlington Power T.
2SB1503 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 5000(Min)@IC= -7A ·Low-Collector Saturation Voltage-
: VCE(sat).
