2SB1531 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Darlington Power Transistor 2SB1531 .
High DC Current Gain- : hFE= 5000(Min)@IC= -5A. Low-Collector Saturation Voltage- : VCE(sat)= -2. Complement to Type 2SD.

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Datasheet Specifications

Part number: 2SB1531
Manufacturer: Inchange Semiconductor
File Size: 222.97 KB
Datasheet: 2SB1531-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃

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2SB1531 Silicon PNP Power Transistor Inchange Semiconductor

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