Datasheet4U Logo Datasheet4U.com

2SB1531 - Silicon PNP Power Transistor

2SB1531 Description

isc Silicon PNP Darlington Power Transistor 2SB1531 .
High DC Current Gain- : hFE= 5000(Min)@IC= -5A. Low-Collector Saturation Voltage- : VCE(sat)= -2. Complement to Type 2SD.

2SB1531 Applications

* Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃

📥 Download Datasheet

Preview of 2SB1531 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB1531
Manufacturer
Inchange Semiconductor
File Size
222.97 KB
Datasheet
2SB1531-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

📁 Related Datasheet

  • 2SB1530 - Silicon PNP Transistor (Hitachi Semiconductor)
  • 2SB1537 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SB1539 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SB1502 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1503 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1504 - Silicon PNP epitaxial planar type darlington (Panasonic)
  • 2SB1507 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB1508 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

📌 All Tags

Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SB1531-like datasheet