2SB1551
SavantIC
146.44kb
Silicon power transistor. *With TO-220Fa package *High DC current gain *DARLINGTON APPLICATIONS *For medium speed and power switching applications PINNING PIN
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2SB1550 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1550
DESCRIPTION ·With TO-220C package ·High DC .
2SB1550 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High DC Current Gain-
: hFE= 100.
2SB1551 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High DC Current Gain·Built-in res.
2SB1553 - Silicon PNP epitaxial planar type Transistor
(Panasonic Semiconductor)
Power Transistors
2SB1553
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
s Features
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0
q q .
2SB1554 - Silicon PNP epitaxial planar type Transistor
(Panasonic Semiconductor)
Power Transistors
2SB1554
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
s Features
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0
q q
.
2SB1555 - TRANSISTOR
(Toshiba Semiconductor)
.
2SB1555 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·High DC Current Gain-
: hFE= 50.
2SB1556 - TRANSISTOR
(Toshiba Semiconductor)
.
2SB1556 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·High DC Current Gain-
: hFE= 50.
2SB1556 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1556
DESCRIPTION ·With TO-3PL package ·Complemen.