Part number:
2SB1558
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
145.47 KB
Description:
Transistor.
.
2SB1558
Toshiba ↗ Semiconductor
145.47 KB
Transistor.
.
📁 Related Datasheet
2SB1550 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1550
DESCRIPTION ·With TO-220C package ·High DC .
2SB1550 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High DC Current Gain-
: hFE= 100.
2SB1551 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1551
DESCRIPTION ·With TO-220Fa package ·High DC.
2SB1551 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High DC Current Gain·Built-in res.
2SB1553 - Silicon PNP epitaxial planar type Transistor
(Panasonic Semiconductor)
Power Transistors
2SB1553
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
s Features
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0
q q .
2SB1554 - Silicon PNP epitaxial planar type Transistor
(Panasonic Semiconductor)
Power Transistors
2SB1554
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
s Features
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0
q q
.
2SB1555 - TRANSISTOR
(Toshiba Semiconductor)
.
2SB1555 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·High DC Current Gain-
: hFE= 50.
