2SB1555
Toshiba ↗ Semiconductor
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2SB1550 - SILICON POWER TRANSISTOR
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Product Specification
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DESCRIPTION ·With TO-220C package ·High DC .
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isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
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2SB1553 - Silicon PNP epitaxial planar type Transistor
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Unit: mm
s Features
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0
q q .
2SB1554 - Silicon PNP epitaxial planar type Transistor
(Panasonic Semiconductor)
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s Features
13.0±0.2 4.2±0.2
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q q
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2SB1555 - PNP Transistor
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isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·High DC Current Gain-
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2SB1556 - TRANSISTOR
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2SB1556 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·High DC Current Gain-
: hFE= 50.
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(SavantIC)
SavantIC Semiconductor
..
Product Specification
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DESCRIPTION ·With TO-3PL package ·Complemen.
