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2SB1555 PNP Transistor

2SB1555 Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min). High DC Current Gain- : hFE= 5000(Min)@IC= -6A. Complement to Type 2SD2384.

2SB1555 Applications

* Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current-Continuous

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Datasheet Details

Part number
2SB1555
Manufacturer
INCHANGE
File Size
215.85 KB
Datasheet
2SB1555-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1555-like datasheet