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2SC1163 NPN Transistor

2SC1163 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1163 .
High Collector Current IC= 0. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). Good Linearity of hFE. Low Collector Sat.

2SC1163 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous PC Collector Power Diss

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Datasheet Details

Part number
2SC1163
Manufacturer
INCHANGE
File Size
178.78 KB
Datasheet
2SC1163-INCHANGE.pdf
Description
NPN Transistor

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INCHANGE 2SC1163-like datasheet