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2SC2336 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
Good Linearity of hFE. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min). Wide Area of Safe Operation. Complement to Ty.

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Datasheet Specifications

Part number
2SC2336
Manufacturer
INCHANGE
File Size
194.67 KB
Datasheet
2SC2336-INCHANGE.pdf
Description
NPN Transistor

Applications

* Adudio frequency power amplifier
* High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 1.5 A ICM

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