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2SC2979 NPN Transistor

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Description

isc Silicon NPN Power Transistor 2SC2979 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Fas.

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Datasheet Specifications

Part number
2SC2979
Manufacturer
INCHANGE
File Size
190.00 KB
Datasheet
2SC2979-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for high-voltage, high-speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A

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