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2SC3150 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : V(BR)CBO= 900V(Min). Fast Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for r.

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Datasheet Specifications

Part number
2SC3150
Manufacturer
INCHANGE
File Size
212.26 KB
Datasheet
2SC3150-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak

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