2SC3153 - NPN Triple Diffused Planar Silicon Transistor

Product Overview

Sanyo Semicon Device

Part number	2SC3153
Manufacturer	Sanyo Semicon Device
File Size	95.96 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC3153 Datasheet
Additional preview pages of the 2SC3153 datasheet.

High breakdown voltage (VCBO≥900V).
Fast switching speed.
Wide ASO. Package Dimensions unit:mm 2022A [2SC3153] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Pulse, PW≤300µs, Duty Cycle≤10% Tc=25˚C Electric.

📁 Similar Datasheet

2SC3150A - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
2SC3156 - NPN Transistor (INCHANGE)
2SC3157 - SILICON POWER TRANSISTOR (SavantIC)
2SC3158 - NPN Transistor (INCHANGE)
2SC3159 - NPN Transistor (INCHANGE)
2SC3101 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
2SC3102 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
2SC3103 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)

Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |