2SC3146 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). High DC Current Gain : hFE= 2000(Min) @IC= 3. Wide Area of Safe Operation.

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Datasheet Specifications

Part number: 2SC3146
Manufacturer: INCHANGE
File Size: 189.92 KB
Datasheet: 2SC3146-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high-speed drivers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A Collector Power Dissipation @ T

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2SC3146 NPN Transistor INCHANGE

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