Datasheet4U Logo Datasheet4U.com

2SC3229 - NPN Transistor

2SC3229 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3229 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). High Switching Speed. 100% avalanche tested. Minimum Lot-to-Lot variation.

2SC3229 Applications

* Designed for switching regulator, lighting inverter and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continu

📥 Download Datasheet

Preview of 2SC3229 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SC3229
Manufacturer
INCHANGE
File Size
176.12 KB
Datasheet
2SC3229-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SC3220 - High Voltage Ultra High Speed Switching Transistors (Shindengen Electric Mfg.Co.Ltd)
  • 2SC3221 - High Voltage Ultra High Speed Switching Transistors (Shindengen Electric Mfg.Co.Ltd)
  • 2SC3222 - High Voltage Ultra High Speed Switching Transistors (Shindengen Electric Mfg.Co.Ltd)
  • 2SC3225 - Silicon NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SC3228 - TRANSISTOR (Korea Electronics)
  • 2SC3200 - SILICON NPN TRANSISTOR (Korea Electronics)
  • 2SC3201 - SILICON NPN TRANSISTOR (Korea Electronics)
  • 2SC3202 - SILICON NPN TRANSISTOR (Korea Electronics)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SC3229-like datasheet