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2SC3225 - Silicon NPN TRANSISTOR

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Part number 2SC3225
Manufacturer Toshiba Semiconductor
File Size 138.92 KB
Description Silicon NPN TRANSISTOR
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2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Switching Applications Solenoid Drive Applications Industrial Applications Unit: mm • High DC current gain: hFE = 500 (min) (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 40 7 2 0.5 900 150 −55 to 150 Unit V V V A A mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.
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