| Part number | 2SC3279 |
|---|---|
| Datasheet | 2SC3279_ToshibaSemiconductor.pdf |
| File Size | 104.56 KB |
| Manufacturer | Toshiba |
| Description | NPN TRANSISTOR |
|
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2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications · High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A) · Low saturation voltage:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC3279 | NPN Transistor | WEJ |
| Cnelectr | 2SC3279 | NPN Silicon Epitaxial Transistors | Cnelectr |
 |
2SC3279 | NPN Silicon Epitaxial Planar Transistor | SEMTECH |
 |
2SC3279 | NPN Silicon Epitaxial Planar Transistor | Bluecolour |
 |
2SC3279 | NPN Plastic Encapsulated Transistor | Secos |
| Part Number | Description |
|---|---|
| 2SC3225 | Silicon NPN TRANSISTOR |
| 2SC3233 | NPN TRIPLE DIFFUSED TRANSISTOR |
| 2SC3265 | Silicon NPN TRANSISTOR |
| 2SC3266 | Silicon NPN TRANSISTOR |
| 2SC3267 | Silicon NPN TRANSISTOR |
| 2SC3268 | Silicon NPN Transistor |
| 2SC3295 | NPN TRANSISTOR |
| 2SC3298B | Silicon NPN Transistor |
| 2SC3006 | Silicon NPN epitaxial planer type Transistor |
| 2SC3011 | Silicon NPN epitaxial planer Transistor |
