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2SC3279 - NPN Silicon Epitaxial Transistors

Key Features

  • High DC Current Gain and excellent hFE Linearity hFE(1) =140-600 (V CE=1.0V, IC=0.5A) hFE(2) =70 (Min. ), 200 (Typ. ) (VCE=1.0V, IC=2.0A) NPN Silicon Epitaxial Transistors TO-92 A E Pin Configuration Bottom View E C B Maximum Ratings Symbol V CEO V CES V CBO V EBO IC IB PC TJ TSTG Symbol Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - DC Pulsed (1) Base Current Collector power dissipation Junction Temperatur.

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Datasheet Details

Part number 2SC3279
Manufacturer Cnelectr
File Size 378.41 KB
Description NPN Silicon Epitaxial Transistors
Datasheet download datasheet 2SC3279 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC3279 Features • High DC Current Gain and excellent hFE Linearity hFE(1) =140-600 (V CE=1.0V, IC=0.5A) hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) NPN Silicon Epitaxial Transistors TO-92 A E Pin Configuration Bottom View E C B Maximum Ratings Symbol V CEO V CES V CBO V EBO IC IB PC TJ TSTG Symbol Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - DC Pulsed (1) Base Current Collector power dissipation Junction Temperature Storage Temperature Parameter Collector-Emitter Voltage (IC=10mAdc, IB =0) Collector-Emitter Voltage (IE =1.0mAdc, IC=0) Collector Cutoff Current (VCB=30Vdc,IE =0) Emitter Cutoff Current (VEB =6.