2SC3279 Datasheet PDF

FEATURES

● High DC Current Gain and excellent hFE Linearity hFE(1) =140-600 (V CE=1.0V, IC=0.5A) hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) NPN Silicon Epitaxial Transistors TO-92 A E Pin Configuration Bottom View E C B

MAXIMUM RATINGS

Symbol V CEO V CES V CBO V EBO IC IB PC TJ TSTG Symbol Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - DC Pulsed (1) Base Current Collector power dissipation Junction Temperature Storage Temperature Parameter Collector-Emitter Voltage (IC=10mAdc, IB =0) Collector-Emitter Voltage (IE =1.0mAdc, IC=0) Collector Cutoff Current (VCB=30Vdc,IE =0) Emitter Cutoff Current (VEB =6.0Vdc, IC=0) Min 10 6.0 ----Rating 10 30 30 6.0 2.0 5.0 0.2 750 -55 to +150 -55 to +150 Typ --------Max ----0.1 0.1 Unit V V V V A A mW O C O C Units Vdc Vdc uAdc uAdc B C

ELECTRICAL CHARACTERISTICS

@ 25OC Unless Otherwise Specified OFF CHARACTERISTICS V (BR)CEO V (BR)EBO ICBO IEBO D ON CHARACTERISTICS DC Current Gain (2) (IC=0.5Adc, VCE=1.0Vdc) 140 --600 hFE(2) DC Current Gain (IC=2.0Adc, VCE=1.0Vdc) 70 200 --V CE(sat) Collector Saturation Voltage (IC=2.