FEATURES
Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO Collector-emitter saturation voltage Base-emitter voltage Transition frequency CLASSIFICATION OF hFE W Rank Range J E E C E L L 140-240 R T M V(BR)CEO V(BR)EBO ICBO O IEBO hFE VBE N Test Ic=1mA , IE=0 IC C O 1 2 3 D T L , . MAX UNIT V V V 0.1 0.1 µA µA conditions MIN 30 10 6 IC=10mA , IB=0 IE=1mA, IC=0 VCB=30 V , IE=0 VEB=6 V , IC=0 VCE=1V, IC=0.5A IC=2A, IB= 100mA IC= 2A, VCE=1V VCE=1V, IC= 0.5A 140 600 0.8 1.5 V V VCE(sat) fT f = 30MHz 100 MHz N 300-450 P 420-600 200-330 WEJ ELECTRONIC CO. Http:// E-mail:wej@yongerj...
WEJ