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2SC3279
NPN Silicon Epitaxial Planar Transistor
for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25oC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Pulsed(Note 1) Collector Current DC Base Current Power Dissipation Junction Temperature Storage Temperature Range Note 1: Pulse Width=10ms (Max.), Duty Cycle=30%(Max.) Symbol VCBO VCES VCEO VEBO ICP IC IB Ptot Tj TS Value 30 30 V 10 6 5 2 0.
2SC3279 Datasheet
