SeCoS Halbleitertechnologie GmbH 2SC3279
NPN Plastic Encapsulated Transistor
| Part No. | 2SC3279 |
|---|---|
| Datasheet | 2SC3279 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Plastic Encapsulated Transistor |
| Buy | Stock & Price |
FEATURES
High DC current gain and excellent hFE linearity. Low saturation voltage. G H TO-92 CLASSIFICATION OF hFE Product-Rank 2SC3279-L 2SC3279-M 2SC3279-N Range 140~240 200~330 300~450 2SC3279-P 420~600 K J A B D 1Emitter 2Collector 3Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 E C F Collector 2 3 Base 1 EmitterABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating 30 10 6 2 0.75 150, -55~150 Unit V V V A W ° CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gai...