2SC3281 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 3.

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Datasheet Specifications

Part number: 2SC3281
Manufacturer: INCHANGE
File Size: 198.08 KB
Datasheet: 2SC3281-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power amplifier applications
* Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base voltage 5

2SC3281 Distributors

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NPN Transistor INCHANGE

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