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2SC3365 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device perfo.

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Datasheet Specifications

Part number
2SC3365
Manufacturer
INCHANGE
File Size
213.83 KB
Datasheet
2SC3365-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 10

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