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2SC3855 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) DC Current Gain- : hFE= 50(Min)@ IC= 3A Complement to Type 2SA1491 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio and general purpose applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·DC Current Gain- : hFE= 50(Min)@ IC= 3A ·Complement to Type 2SA1491 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC3855 isc website：www.iscsemi.
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