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2SC3855 NPN Transistor

2SC3855 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min). DC Current Gain- : hFE= 50(Min)@ IC= 3A. Complement to Type 2SA1491. Mini.

2SC3855 Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IB Base Current-Conti

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Datasheet Details

Part number
2SC3855
Manufacturer
INCHANGE
File Size
208.17 KB
Datasheet
2SC3855-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC3855-like datasheet