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2SC4370 NPN Transistor

2SC4370 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4370 .
High Collector-Emitter Breakdown Voltage VCEO= 160V(Min). Complement to Type 2SA1659. Full-mold package that does not require an insulati.

2SC4370 Applications

* Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC(DC) Collector Current(DC) 1.5 A IB(DC) PC TJ Base Current Collecto

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Datasheet Details

Part number
2SC4370
Manufacturer
INCHANGE
File Size
174.42 KB
Datasheet
2SC4370-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC4370-like datasheet