2SC4370 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4370 .
High Collector-Emitter Breakdown Voltage VCEO= 160V(Min). Complement to Type 2SA1659. Full-mold package that does not require an insulati.

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Datasheet Specifications

Part number: 2SC4370
Manufacturer: INCHANGE
File Size: 174.42 KB
Datasheet: 2SC4370-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC(DC) Collector Current(DC) 1.5 A IB(DC) PC TJ Base Current Collecto

2SC4370 Distributors

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2SC4370 NPN Transistor INCHANGE

INCHANGE 2SC4370-like datasheet