2SC5517 Datasheet - INCHANGE

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2SC5517 NPN Transistor

isc Silicon NPN Power Transistor .
High Breakdown Voltage- ：VCBO= 1700V (Min). High Switching Speed. Wide Area of Safe Operation. Built-in Damper Diode. 100% avalan.

2SC5517-INCHANGE.pdf

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Datasheet Details

Part number:

2SC5517

Manufacturer:

INCHANGE

File Size:

176.03 KB

Description:

NPN Transistor

Applications

* Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 6 A ICM Collector Cu

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