2SC5517 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- ：VCBO= 1700V (Min). High Switching Speed. Wide Area of Safe Operation. Built-in Damper Diode. 100% avalan.

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Datasheet Specifications

Part number: 2SC5517
Manufacturer: INCHANGE
File Size: 176.03 KB
Datasheet: 2SC5517-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 6 A ICM Collector Cu

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2SC5517 NPN Transistor INCHANGE

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