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2SD1070

NPN Transistor

2SD1070 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.)
*Good Linearity of hFE
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for high power amplifier applications. ABSOLUTE MAXIMUM RA.

2SD1070 Datasheet (182.85 KB)

Preview of 2SD1070 PDF

Datasheet Details

Part number:

2SD1070

Manufacturer:

INCHANGE

File Size:

182.85 KB

Description:

Npn transistor.

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2SD1070 NPN Transistor INCHANGE

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