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2SD1070 - NPN Transistor

2SD1070 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1070 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min. Good Linearity of hFE. Wide Area of Safe Operation. Minimum Lot-to-Lot v.

2SD1070 Applications

* Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Pul

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Datasheet Details

Part number
2SD1070
Manufacturer
INCHANGE
File Size
182.85 KB
Datasheet
2SD1070-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1070-like datasheet