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2SD1070 Datasheet - INCHANGE

2SD1070 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) *Good Linearity of hFE *Wide Area of Safe Operation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for high power amplifier applications. ABSOLUTE MAXIMUM RA.

2SD1070-INCHANGE.pdf

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Datasheet Details

Part number:

2SD1070

Manufacturer:

INCHANGE

File Size:

182.85 KB

Description:

Npn transistor.

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2SD1070 2SD1070 NPN Transistor INCHANGE

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