2SD1070 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1070 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min. Good Linearity of hFE. Wide Area of Safe Operation. Minimum Lot-to-Lot v.

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Datasheet Specifications

Part number: 2SD1070
Manufacturer: INCHANGE
File Size: 182.85 KB
Datasheet: 2SD1070-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Pul

2SD1070 Distributors

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2SD1070 NPN Transistor INCHANGE

INCHANGE 2SD1070-like datasheet