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2SD1437 NPN Transistor

2SD1437 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage :V(BR)CEO= 60V(Min). Complement to Type 2SB1033. Low Collector Saturation Voltage. Minimum Lot-to.

2SD1437 Applications

* Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃

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Datasheet Details

Part number
2SD1437
Manufacturer
INCHANGE
File Size
205.40 KB
Datasheet
2SD1437-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1437-like datasheet