* . High DC Current Gain : hFE=2000(Min.) (VcE=2V, Ic=lA) . Low Saturation Voltage : VCE(sat)=1.5V(Max.) (I C=1A, I B=lmA) INDUSTRIAL APPLICATIONS Unit in mm 7. 9 MAX. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Bas
2SD1438
Toshiba ↗ Semiconductor
89.85 KB
Silicon npn transistor.
:
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
6
2SD1 438
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER.
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