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2SD1441 NPN Transistor

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Description

isc Silicon NPN Power Transistor 2SD1441 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Built-in Damper Diode. Minimum Lot-to-Lot variations for robust de.

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Datasheet Specifications

Part number
2SD1441
Manufacturer
INCHANGE
File Size
210.16 KB
Datasheet
2SD1441-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 4 A ICP Collector C

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