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2SD1444 NPN Transistor

2SD1444 Description

isc Silicon NPN Power Transistor 2SD1444 .
Low Collector Saturation Voltage : VCE(sat)= 0. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V (Min). Complement to.

2SD1444 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Colle

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Datasheet Details

Part number
2SD1444
Manufacturer
INCHANGE
File Size
212.37 KB
Datasheet
2SD1444-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1444-like datasheet