2SD1565 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor 2SD1565 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A). Minimum Lot-to-Lot.

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Datasheet Specifications

Part number: 2SD1565
Manufacturer: INCHANGE
File Size: 206.66 KB
Datasheet: 2SD1565-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifiers and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous

2SD1565 Distributors

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2SD1565 NPN Transistor INCHANGE

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