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2SD1565 NPN Transistor

2SD1565 Description

isc Silicon NPN Darlington Power Transistor 2SD1565 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A). Minimum Lot-to-Lot.

2SD1565 Applications

* Designed for low frequency power amplifiers and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous

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Datasheet Details

Part number
2SD1565
Manufacturer
INCHANGE
File Size
206.66 KB
Datasheet
2SD1565-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1565-like datasheet