2SD1958

NPN Transistor

INCHANGE

2SD1958 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.)
*Good Linearity of hFE
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for TV horizontal deflection output high-current switching ap.

2SD1958 Datasheet (204.31 KB)

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2SD1958

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INCHANGE

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Npn transistor.

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2SD1958 NPN Transistor INCHANGE

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2SD1958 General Description

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