2SD1958 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD1958 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min. Good Linearity of hFE. Wide Area of Safe Operation. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number: 2SD1958
Manufacturer: INCHANGE
File Size: 204.31 KB
Datasheet: 2SD1958-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for TV horizontal deflection output high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous

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2SD1958 NPN Transistor INCHANGE

INCHANGE 2SD1958-like datasheet