2SD1903 - PNP/NPN Epitaxial Planar Silicon Transistors
2SD1903 Features
* Suitable for sets whose height is restricted.
* Low collector to emitter saturation voltage : VCE(sat)=
* 0.5V (PNP), 0.4V (NPN) max.
* Large current capacity. Package Dimensions unit:mm 2049B [2SB1267/2SD1903] ( ) : 2SB1267 Specifications E : Emitter C : Collector B : Base SA
