2SD1912 Datasheet - Inchange Semiconductor

2SD1912, Silicon NPN Power Transistor

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Wide Area of Safe Operation. Low Collector Saturation Voltage. Minimum Lot.

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Datasheet Details

Part number:

2SD1912

Manufacturer:

Inchange Semiconductor

File Size:

217.05 KB

Description:

Silicon NPN Power Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Curre

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2SD1912 Silicon NPN Power Transistor Inchange Semiconductor

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