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2SD1912 Datasheet - Inchange Semiconductor

2SD1912 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *Wide Area of Safe Operation *Low Collector Saturation Voltage *Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SD1912 APPLICATIONS *Designed for low frequency .

2SD1912_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1912

Manufacturer:

Inchange Semiconductor

File Size:

217.05 KB

Description:

Silicon npn power transistor.

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2SD1912 2SD1912 Silicon NPN Power Transistor Inchange Semiconductor

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