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2SD1928 Power Transistor

2SD1928 Description

isc Silicon NPN Darlington Power Transistor 2SD1928 .
Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC Current Gain : hFE= 2000(Min) @ IC= 4A. Minimum Lot-to-Lot v.

2SD1928 Applications

* Designed for audio frequency power amplifier and low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuo

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Power Transistor Inchange Semiconductor
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