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2SD1932 - Power Transistor

2SD1932 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A). Minimum Lot-to-Lot.

2SD1932 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Colle

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Power Transistor Inchange Semiconductor
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