2SD1932 Datasheet - Inchange Semiconductor

Datasheet Details

Part number:

2SD1932

Manufacturer:

Inchange Semiconductor

File Size:

210.19 KB

Description:

Power Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed fo

2SD1932_InchangeSemiconductor.pdf

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2SD1932, Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power amplifier applications.

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