2SD1934 Datasheet - Panasonic Semiconductor

2SD1934 Silicon NPN epitaxial planer type Transistor

Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope 5.0±0.2 Unit: mm 4.0±0.2 q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 40 20 7 8 5 1 150 55 ~ +150 Unit V V V A A W ˚C ˚C 1 2 3 2.54±0.1.

2SD1934 Features

* 0.45

* 0.1 +0.15 1:Emitter 2:Collector 3:Base TO

* 92NL Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transiti

2SD1934_PanasonicSemiconductor.pdf