2SD1918 Datasheet - Inchange Semiconductor

2SD1918, Silicon NPN Power Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 .
High fT：fT=80MHz(TYP). High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min). Excellent linearity of hFE. 100% avalanche te.

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2SD1918-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1918

Manufacturer:

Inchange Semiconductor

File Size:

189.98 KB

Description:

Silicon NPN Power Transistor

Applications

* Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak Collec

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2SD1918 Silicon NPN Power Transistor Inchange Semiconductor

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