2SD1918 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 .
High fT：fT=80MHz(TYP). High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min). Excellent linearity of hFE. 100% avalanche te.

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Datasheet Specifications

Part number: 2SD1918
Manufacturer: Inchange Semiconductor
File Size: 189.98 KB
Datasheet: 2SD1918-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak Collec

2SD1918 Distributors

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2SD1918 Silicon NPN Power Transistor Inchange Semiconductor

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