2SD1913 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Wide Area of Safe Operation. Complement to Type 2SB1274. Minimum Lot-to-Lo.

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Datasheet Specifications

Part number: 2SD1913
Manufacturer: INCHANGE
File Size: 209.72 KB
Datasheet: 2SD1913-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak

2SD1913 Distributors

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NPN Transistor INCHANGE

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