2SD1940 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 85V(Min. Good Linearity of hFE. Wide Area of Safe Operation. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number: 2SD1940
Manufacturer: INCHANGE
File Size: 209.18 KB
Datasheet: 2SD1940-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for AF 25~30W output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 85 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC

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2SD1940 NPN Transistor INCHANGE

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