Datasheet Details
- Part number
- 2SD1933
- Manufacturer
- INCHANGE
- File Size
- 208.67 KB
- Datasheet
- 2SD1933-INCHANGE.pdf
- Description
- NPN Transistor
2SD1933 Description
isc Silicon NPN Darlington Power Transistor 2SD1933 .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min).
High DC Current Gain-
: hFE= 1000(Min)@ (VCE= 3V, IC= 2A).
Complement to Type.
2SD1933 Applications
* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
Collec
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