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2SD1933 - NPN Transistor

2SD1933 Description

isc Silicon NPN Darlington Power Transistor 2SD1933 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A). Complement to Type.

2SD1933 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collec

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Datasheet Details

Part number
2SD1933
Manufacturer
INCHANGE
File Size
208.67 KB
Datasheet
2SD1933-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1933-like datasheet