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2SD1933 Datasheet - INCHANGE

2SD1933 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) *Complement to Type 2SB1342 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power amplifier applica.

2SD1933-INCHANGE.pdf

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Datasheet Details

Part number:

2SD1933

Manufacturer:

INCHANGE

File Size:

208.67 KB

Description:

Npn transistor.

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