2SD1933 Datasheet, Transistor, INCHANGE

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2SD1933

INCHANGE

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Npn transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) *Complement to

Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT

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2SD1933 NPN Transistor INCHANGE