2SD2079 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A). Low Collector Satu.

📥 Download Datasheet

2SD2079 Datasheet Preview — Preview of 2SD2079 PDF

Datasheet Specifications

Part number: 2SD2079
Manufacturer: INCHANGE
File Size: 192.00 KB
Datasheet: 2SD2079-INCHANGE.pdf
Description: NPN Transistor

Applications

* High power switching applications.
* Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuo

2SD2079 Distributors

📁 Related Datasheet

2SD2074 2SD2075 2SD2075A 2SD2000 2SD2005 2SD2006

📌 All Tags

2SD2079 NPN Transistor INCHANGE

INCHANGE 2SD2079-like datasheet