2SD2014 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC C.

📥 Download Datasheet

2SD2014 Datasheet Preview — Preview of 2SD2014 PDF

Datasheet Specifications

Part number: 2SD2014
Manufacturer: INCHANGE
File Size: 206.84 KB
Datasheet: 2SD2014-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed of driver of solenoid, relay and motor, series regulator and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Cur

2SD2014 Distributors

📁 Related Datasheet

2SD2010 2SD2012 2SD2015 2SD2016 2SD2017 2SD2018

📌 All Tags

2SD2014 NPN Transistor INCHANGE

INCHANGE 2SD2014-like datasheet