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2SD2014

NPN Transistor

2SD2014 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min)
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A
*High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V
*Complement to Type 2SB1257
*Minimum Lot-to-Lot variations for robust device performance and re.

2SD2014 Datasheet (206.84 KB)

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Datasheet Details

Part number:

2SD2014

Manufacturer:

INCHANGE

File Size:

206.84 KB

Description:

Npn transistor.

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2SD2014 NPN Transistor INCHANGE

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