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2SD730

NPN Transistor

2SD730 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.)
*High DC Current Gain- : hFE= 1000(Min.)@IC= 12A
*Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Pow.

2SD730 Datasheet (181.15 KB)

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Datasheet Details

Part number:

2SD730

Manufacturer:

INCHANGE

File Size:

181.15 KB

Description:

Npn transistor.

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2SD730 NPN Transistor INCHANGE

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