2SD730 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD730 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min. High DC Current Gain- : hFE= 1000(Min. Low Collector Saturation Vo.

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Datasheet Specifications

Part number: 2SD730
Manufacturer: INCHANGE
File Size: 181.15 KB
Datasheet: 2SD730-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power switching
* Hammer drivers
* Series and shunt regulator
* General purpose amplifier amplifiers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.0 V IC C

2SD730 Distributors

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2SD730 NPN Transistor INCHANGE

INCHANGE 2SD730-like datasheet