2SD731 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD731 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2S.

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Datasheet Specifications

Part number: 2SD731
Manufacturer: INCHANGE
File Size: 201.84 KB
Datasheet: 2SD731-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 170 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7

2SD731 Distributors

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2SD731 NPN Transistor INCHANGE

INCHANGE 2SD731-like datasheet